Invention Grant
- Patent Title: Pumping circuit for multiple nonvolatile memories
- Patent Title (中): 多个非易失性存储器的抽运电路
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Application No.: US12110435Application Date: 2008-04-28
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Publication No.: US07656737B2Publication Date: 2010-02-02
- Inventor: Chun-Yao Liao
- Applicant: Chun-Yao Liao
- Applicant Address: TW Hsinchu
- Assignee: Holtek Semiconductor Inc.
- Current Assignee: Holtek Semiconductor Inc.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW97107600A 20080305
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A pumping circuit for multiple nonvolatile memories, comprising: a high voltage source; and a high voltage pass block with a gate controlled by a local booster to introduce the high voltage source into a plurality of nonvolatile memories for erase/write operation.
Public/Granted literature
- US20090225619A1 PUMPING CIRCUIT FOR MULTIPLE NONVOLATILE MEMORIES Public/Granted day:2009-09-10
Information query
