Invention Grant
US07656741B2 Row active time control circuit and a semiconductor memory device having the same
有权
行有源时间控制电路和具有该行动时间控制电路的半导体存储器件
- Patent Title: Row active time control circuit and a semiconductor memory device having the same
- Patent Title (中): 行有源时间控制电路和具有该行动时间控制电路的半导体存储器件
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Application No.: US12007432Application Date: 2008-01-10
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Publication No.: US07656741B2Publication Date: 2010-02-02
- Inventor: Ji-Hyun Lee , Jong-Hyoung Lim
- Applicant: Ji-Hyun Lee , Jong-Hyoung Lim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0003363 20070111
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A row active time control circuit is described that includes a master signal generating circuit and a row active control signal generating circuit. The master signal generating circuit generates one or more row active master signals based on an active command signal, a pre-charge command signal, and one or more row active control signals. The row active control signal generating circuit generates a pulse signal that oscillates based on the one or more row active master signals. The row active control signal also generates the one or more row active control signals by dividing a frequency of the generated pulse signal.
Public/Granted literature
- US20090097349A1 Row active time control circuit and a semiconductor memory device having the same Public/Granted day:2009-04-16
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