Invention Grant
US07657800B2 Semiconductor memory device and method of performing a memory operation
有权
半导体存储器件和执行存储器操作的方法
- Patent Title: Semiconductor memory device and method of performing a memory operation
- Patent Title (中): 半导体存储器件和执行存储器操作的方法
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Application No.: US11730273Application Date: 2007-03-30
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Publication No.: US07657800B2Publication Date: 2010-02-02
- Inventor: Jong-Hyoung Lim , Sang-Seok Kang
- Applicant: Jong-Hyoung Lim , Sang-Seok Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0077400 20060817
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A semiconductor memory device and method directed to performing a memory operation in a semiconductor memory device, which include receiving data and a data masking signal corresponding to a portion of the received data configured to be written into memory in response to a write command and the data masking signal configured to block the at least a portion of the received data from being written into the memory, and further configuring different timing parameters of the received data and the data masking signal for executing the write command without writing the at least a portion of the received data into the memory.
Public/Granted literature
- US20080052567A1 Semiconductor memory device and method thereof Public/Granted day:2008-02-28
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