Invention Grant
US07657983B2 Method of producing a topology-optimized electrode for a resonator in thin-film technology
有权
在薄膜技术中制造用于谐振器的拓扑优化电极的方法
- Patent Title: Method of producing a topology-optimized electrode for a resonator in thin-film technology
- Patent Title (中): 在薄膜技术中制造用于谐振器的拓扑优化电极的方法
-
Application No.: US10888429Application Date: 2004-07-09
-
Publication No.: US07657983B2Publication Date: 2010-02-09
- Inventor: Robert Aigner , Lüder Elbrecht , Stephan Marksteiner , Winfried Nessler
- Applicant: Robert Aigner , Lüder Elbrecht , Stephan Marksteiner , Winfried Nessler
- Applicant Address: SG Singapore
- Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Priority: DE10200741 20020111
- Main IPC: H03H3/02
- IPC: H03H3/02
Abstract:
In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.
Public/Granted literature
- US20070209174A1 Method of producing a topology-optimized electrode for a resonator in thin-film technology Public/Granted day:2007-09-13
Information query
