Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11660756Application Date: 2005-09-05
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Publication No.: US07658333B2Publication Date: 2010-02-09
- Inventor: Jun Koyama , Shunpei Yamazaki
- Applicant: Jun Koyama , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-264718 20040910
- International Application: PCT/JP2005/016678 WO 20050905
- International Announcement: WO2006/028231 WO 20060316
- Main IPC: G06K19/06
- IPC: G06K19/06

Abstract:
A semiconductor device used as an ID chip is provided, of which operation is terminated when its role is finished or expires. According to the invention, an antenna circuit, a voltage detecting circuit, a current amplifier circuit, a signal processing circuit, and a fuse are provided over an insulating substrate. When large power is applied to the antenna circuit, a voltage is detected by voltage detecting circuit and a corresponding current is amplified by the current amplifier circuit, thereby the fuse is melted down. Also, when an anti-fuse is used, the anti-fuse can short an insulating film by applying an excessive voltage. In this manner, the semiconductor device has a function for making it invalid by stopping operation of the signal processing circuit when the role of the device is finished or expires.
Public/Granted literature
- US20070258221A1 Semiconductor Device Public/Granted day:2007-11-08
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