Invention Grant
US07658773B2 Method for fabricating a solid electrolyte memory device and solid electrolyte memory device
失效
固体电解质存储器件和固体电解质存储器件的制造方法
- Patent Title: Method for fabricating a solid electrolyte memory device and solid electrolyte memory device
- Patent Title (中): 固体电解质存储器件和固体电解质存储器件的制造方法
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Application No.: US11541391Application Date: 2006-09-29
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Publication No.: US07658773B2Publication Date: 2010-02-09
- Inventor: Cay-Uwe Pinnow
- Applicant: Cay-Uwe Pinnow
- Applicant Address: DE Munich FR Corbeil Essonnes Cedex
- Assignee: Qimonda AG,Altis Semiconductor, SNC
- Current Assignee: Qimonda AG,Altis Semiconductor, SNC
- Current Assignee Address: DE Munich FR Corbeil Essonnes Cedex
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01G9/00
- IPC: H01G9/00 ; H01L21/20
Abstract:
A method for fabricating a solid electrolyte memory device comprises a plurality of solid electrolyte memory cells, the solid electrolyte memory cells sharing a common continuous solid electrolyte layer comprising solid electrolyte cell areas and solid electrolyte inter-cell areas, the method comprising the process of introducing mobile ion solubility reducing material or mobile ion mobility reducing material into the solid electrolyte inter-cell areas.
Public/Granted literature
- US20080084653A1 Method for fabricating a solid electrolyte memory device and solid electrolyte memory device Public/Granted day:2008-04-10
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