Invention Grant
US07658815B2 Plasma processing apparatus capable of controlling plasma emission intensity
失效
能够控制等离子体发射强度的等离子体处理装置
- Patent Title: Plasma processing apparatus capable of controlling plasma emission intensity
- Patent Title (中): 能够控制等离子体发射强度的等离子体处理装置
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Application No.: US12105018Application Date: 2008-04-17
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Publication No.: US07658815B2Publication Date: 2010-02-09
- Inventor: Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
- Applicant: Kenji Maeda , Kenetsu Yokogawa , Tadamitsu Kanekiyo
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2005-025333 20050201
- Main IPC: C23F1/02
- IPC: C23F1/02 ; C23C16/513

Abstract:
An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
Public/Granted literature
- US20080210376A1 PLASMA PROCESSING APPARATUS CAPABLE OF CONTROLLING PLASMA EMISSION INTENSITY Public/Granted day:2008-09-04
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