Invention Grant
US07658859B2 Method of processing organic film using plasma etching and method of manufacturing semiconductor device 有权
使用等离子体蚀刻加工有机膜的方法和制造半导体器件的方法

Method of processing organic film using plasma etching and method of manufacturing semiconductor device
Abstract:
A method of forming an organic film disposes a substrate on which the organic film is formed in a chamber capable of reducing a pressure therein, introduces a gas including a deuterium compound or a trideuterium compound in the chamber, to generate a plasma by ionizing the gas; and etches and patterning the organic film by the plasma.
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