Invention Grant
US07658859B2 Method of processing organic film using plasma etching and method of manufacturing semiconductor device
有权
使用等离子体蚀刻加工有机膜的方法和制造半导体器件的方法
- Patent Title: Method of processing organic film using plasma etching and method of manufacturing semiconductor device
- Patent Title (中): 使用等离子体蚀刻加工有机膜的方法和制造半导体器件的方法
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Application No.: US11348239Application Date: 2006-02-07
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Publication No.: US07658859B2Publication Date: 2010-02-09
- Inventor: Hisataka Hayashi
- Applicant: Hisataka Hayashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-032169 20050208
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00

Abstract:
A method of forming an organic film disposes a substrate on which the organic film is formed in a chamber capable of reducing a pressure therein, introduces a gas including a deuterium compound or a trideuterium compound in the chamber, to generate a plasma by ionizing the gas; and etches and patterning the organic film by the plasma.
Public/Granted literature
- US20060191867A1 Method of processing organic film and method of manufacturing semiconductor device Public/Granted day:2006-08-31
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