Invention Grant
- Patent Title: Method of producing carbon nanostructure
- Patent Title (中): 生产碳纳米结构的方法
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Application No.: US10591740Application Date: 2005-05-19
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Publication No.: US07658971B2Publication Date: 2010-02-09
- Inventor: Takeshi Hikata
- Applicant: Takeshi Hikata
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Foley & Lardner LLP
- Priority: JP2004-170016 20040608
- International Application: PCT/JP2005/009154 WO 20050519
- International Announcement: WO2005/121023 WO 20051222
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
A method of producing a carbon nanostructure is provided which can increase evenness of a shape and a purity of the carbon nanostructure and can reduce a production cost. In a method of producing a carbon nanostructure, a carbon crystal is grown by vapor phase epitaxy from a crystal growth surface of a catalyst base including a catalyst material, and the catalyst base is formed by diameter-reduction processing. The catalyst base is preferably formed as an aggregate including an arrangement of a plurality of catalyst structures each formed with a non-catalyst material, a material not having a substantial catalytic function for growth of the carbon crystal, formed on at least a portion of a side surface of the catalyst material of a columnar shape having the crystal growth surface as a top surface. In addition, a non-catalyst material is preferably formed on at least a portion of a side surface of the aggregate, and the catalyst structures preferably have variations of at most CV 10% in surface areas of the catalyst material on the crystal growth surface.
Public/Granted literature
- US20070172410A1 Method of producing carbon nanostructure Public/Granted day:2007-07-26
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