Invention Grant
US07659039B2 Near-field exposure mask, method of producing that mask, near-field exposure apparatus having that mask, and resist pattern forming method
失效
近场曝光掩模，制造该掩模的方法，具有该掩模的近场曝光装置和抗蚀剂图案形成方法
- Patent Title: Near-field exposure mask, method of producing that mask, near-field exposure apparatus having that mask, and resist pattern forming method
- Patent Title (中): 近场曝光掩模，制造该掩模的方法，具有该掩模的近场曝光装置和抗蚀剂图案形成方法
-
Application No.: US10585644Application Date: 2006-06-07
-
Publication No.: US07659039B2Publication Date: 2010-02-09
- Inventor: Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
- Applicant: Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2005-167899 20050608
- International Application: PCT/JP2006/311887 WO 20060607
- International Announcement: WO2006/132425 WO 20061214
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
Disclosed is a near-field exposure mask having a light blocking layer formed on a substrate, the light blocking layer having an opening with an opening width narrower than a wavelength of an exposure light source, wherein exposure of an object to be exposed is carried out by use of near-field light to be produced at the opening while the exposure mask and the object to be exposed are placed in contact with each other, an important feature residing in that the light blocking layer is provided by a film that contains silicon in a range from 50% to 100% in terms of mole fraction.
Public/Granted literature
Information query
