Invention Grant
- Patent Title: Exposure mask and method of manufacturing the same, and semiconductor device manufacturing method
- Patent Title (中): 曝光掩模及其制造方法以及半导体器件的制造方法
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Application No.: US11214891Application Date: 2005-08-31
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Publication No.: US07659040B2Publication Date: 2010-02-09
- Inventor: Yuji Setta
- Applicant: Yuji Setta
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Fujitsu Patent Center
- Priority: JP2005-159077 20050531
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
An exposure mask 24, includes a quartz (transparent) substrate 20, a film 21 formed on the quartz substrate 20, a rectangular main feature 21a formed in the film 21, a first assist feature 21b formed in the film 21 away from the main feature 21a and having a size that is not resolved as a rectangle that has a long side 21e opposing to one side 21d of the main feature 21d, and a second assist feature 21c formed in the film 21 and positioned on a virtual prolonged line L of a diagonal of the main feature 21a and having a size that is not resolved.
Public/Granted literature
- US20060269848A1 Exposure mask and method of manufacturing the same, and semiconductor device manufacturing method Public/Granted day:2006-11-30
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