Invention Grant
US07659129B2 Fabricating method for quantum dot of active layer of LED by nano-lithography
失效
通过纳米光刻法制作LED活性层量子点的方法
- Patent Title: Fabricating method for quantum dot of active layer of LED by nano-lithography
- Patent Title (中): 通过纳米光刻法制作LED活性层量子点的方法
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Application No.: US12216018Application Date: 2008-06-27
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Publication No.: US07659129B2Publication Date: 2010-02-09
- Inventor: Ming-Nung Lin
- Applicant: Ming-Nung Lin
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
The present invention is to provide a “fabricating method for quantum dot active layer of LED by nano-lithography” for fabricating out a new active layer of LED of nano quantum dot structure in more miniature manner than that of the current fabricating facilities to have high quality LED with features in longer light wavelength, brighter luminance and lower forward bias voltage by directly using the current fabricating facilities without any alteration or redesign of the precision.
Public/Granted literature
- US20090087935A1 Fabricating method for quantum dot of active layer of LED by nano-lithography Public/Granted day:2009-04-02
Information query
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