Invention Grant
- Patent Title: Method for manufacturing an organic semiconductor element
- Patent Title (中): 有机半导体元件的制造方法
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Application No.: US11011060Application Date: 2004-12-15
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Publication No.: US07659138B2Publication Date: 2010-02-09
- Inventor: Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
- Applicant: Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
- Applicant Address: JP Atsugi-shi, Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-Ken
- Agency: Nixon Peabody, LLP
- Agent Jeffrey L. Costellia
- Priority: JP2003-434620 20031226
- Main IPC: H01L51/40
- IPC: H01L51/40

Abstract:
In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.
Public/Granted literature
- US20050140840A1 Method for manufacturing an organic semiconductor element Public/Granted day:2005-06-30
Information query
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