Invention Grant
US07659139B2 Method for destruction of metallic carbon nanotubes, method for production of aggregate of semiconducting carbon nanotubes, method for production of thin film of semiconducting carbon nanotubes, method for destruction of semiconducting carbon nanotubes, method for production of aggregate of metallic carbon nanotubes, method for production of thin film of metallic carbon nanotubes, method for production of electronic device, method for production of aggregate of carbon nanotubes, method for selective reaction of semiconducting carbon nanotubes
失效
金属碳纳米管的破坏方法，半导体碳纳米管集合体的制造方法，半导体碳纳米管薄膜的制造方法，半导体碳纳米管的破坏方法，金属碳纳米管集合体的制造方法，制造方法 金属碳纳米管薄膜，电子器件的制造方法，碳纳米管集合体的制造方法，半导体碳纳米管的选择性反应方法
- Patent Title: Method for destruction of metallic carbon nanotubes, method for production of aggregate of semiconducting carbon nanotubes, method for production of thin film of semiconducting carbon nanotubes, method for destruction of semiconducting carbon nanotubes, method for production of aggregate of metallic carbon nanotubes, method for production of thin film of metallic carbon nanotubes, method for production of electronic device, method for production of aggregate of carbon nanotubes, method for selective reaction of semiconducting carbon nanotubes
- Patent Title (中): 金属碳纳米管的破坏方法，半导体碳纳米管集合体的制造方法，半导体碳纳米管薄膜的制造方法，半导体碳纳米管的破坏方法，金属碳纳米管集合体的制造方法，制造方法 金属碳纳米管薄膜，电子器件的制造方法，碳纳米管集合体的制造方法，半导体碳纳米管的选择性反应方法
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Application No.: US11459782Application Date: 2006-07-25
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Publication No.: US07659139B2Publication Date: 2010-02-09
- Inventor: Houjin Huang
- Applicant: Houjin Huang
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JPP2005-219846 20050729
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L21/44
Abstract:
A method for destruction of metallic carbon nanotubes is provided. The method includes irradiating a mixture of semiconducting carbon nanotubes and metallic carbon nanotubes with energy beams (such as laser light), thereby selectively destroying metallic carbon nanotubes or semiconducting carbon nanotubes. The energy beams have energy components for resonance absorption by the metallic carbon nanotubes or semiconducting carbon nanotubes.
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