Invention Grant
US07659156B2 Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer
有权
通过选择性Ge缩合和高K电介质层选择性调制栅极功能的方法
- Patent Title: Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer
- Patent Title (中): 通过选择性Ge缩合和高K电介质层选择性调制栅极功能的方法
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Application No.: US11788216Application Date: 2007-04-18
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Publication No.: US07659156B2Publication Date: 2010-02-09
- Inventor: Voon-Yew Thean , Marc Rossow , Gregory S. Spencer , Tab A. Stephens , Dina H. Triyoso , Victor H. Vartanian
- Applicant: Voon-Yew Thean , Marc Rossow , Gregory S. Spencer , Tab A. Stephens , Dina H. Triyoso , Victor H. Vartanian
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Fortkort & Houston P.C.
- Agent John A. Fortkort
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device is provided which comprises a semiconductor layer (109), a dielectric layer (111), first and second gate electrodes (129, 131) having first and second respective work functions associated therewith, and a layer of hafnium oxide (113) disposed between said dielectric layer and said first and second gate electrodes.
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