Method of manufacturing a flash memory device

Invention Grant

US07659159B2 Method of manufacturing a flash memory device 失效

Title translation: 制造闪存装置的方法

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Patent Title: Method of manufacturing a flash memory device
Patent Title (中): 制造闪存装置的方法
Application No.: US11753363

Application Date: 2007-05-24
Publication No.: US07659159B2

Publication Date: 2010-02-09
Inventor: Sung Hoon Lee
Applicant: Sung Hoon Lee
Applicant Address: KR Icheon-si
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Icheon-si
Agency: Townsend and Townsend and Crew LLP
Priority: KR10-2006-0121522 20061204
Main IPC: H01L21/8238
IPC: H01L21/8238

Method of manufacturing a flash memory device

Abstract:

In a method of fabricating a flash memory device, a semiconductor substrate includes a tunnel insulating layer and a charge storage layer formed in an active region and a trench formed in an isolation region. A first insulating layer is formed to fill a part of the trench. A second insulating layer is formed on the first insulating layer so that the trench is filled. The first and second insulating layers are removed such that the first and second insulating layers remain on sidewalls of the charge storage layer and on a part of the trench. A third insulating layer is formed on the first and second insulating layers so that a space defined by the charge storage layer is filled. The third insulating layer is removed so that a height of the third insulating layer is lowered.

Abstract(Chinese):

在制造闪速存储器件的方法中，半导体衬底包括隧道绝缘层和形成在有源区中的电荷存储层和形成在隔离区中的沟槽。形成第一绝缘层以填充沟槽的一部分。在第一绝缘层上形成第二绝缘层，以便填充沟槽。去除第一和第二绝缘层，使得第一和第二绝缘层保留在电荷存储层的侧壁和沟槽的一部分上。在第一和第二绝缘层上形成第三绝缘层，从而填充由电荷存储层限定的空间。去除第三绝缘层，使得第三绝缘层的高度降低。

Public/Granted literature

US20080132016A1 METHOD OF MANUFACTURING A FLASH MEMORY DEVICE Public/Granted day:2008-06-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS