Semiconductor devices having recessed structures and methods of forming the same

Invention Grant

US07659163B2 Semiconductor devices having recessed structures and methods of forming the same 有权

Title translation: 具有凹陷结构的半导体器件及其形成方法

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Patent Title: Semiconductor devices having recessed structures and methods of forming the same
Patent Title (中): 具有凹陷结构的半导体器件及其形成方法
Application No.: US11564929

Application Date: 2006-11-30
Publication No.: US07659163B2

Publication Date: 2010-02-09
Inventor: Chih-Huang Wu , Chien-Jung Yang
Applicant: Chih-Huang Wu , Chien-Jung Yang
Applicant Address: TW Taoyuan
Assignee: Nanya Technology Corp.
Current Assignee: Nanya Technology Corp.
Current Assignee Address: TW Taoyuan
Agency: Ingrassia Fisher & Lorenz, P.C.
Priority: TW95103669A 20060127
Main IPC: H01L21/8242
IPC: H01L21/8242

Semiconductor devices having recessed structures and methods of forming the same

Abstract:

A method for forming a semiconductor device is provided. The method includes providing a substrate having a plurality of protrusions projecting from the substrate; forming a silicon layer over the substrate and each protrusion; performing an anisotropic etching to transfer the silicon layer into a silicon spacer positioned on a side wall of each protrusion; forming an oxide layer over the silicon spacer; and etching the substrate to form a recess on the substrate by using the oxide layer as a mask.

Abstract(Chinese):

提供一种形成半导体器件的方法。该方法包括提供具有从基板突出的多个突起的基板; 在衬底和每个突起上形成硅层; 执行各向异性蚀刻以将硅层转移到位于每个突起的侧壁上的硅隔离物中; 在所述硅间隔物上形成氧化物层; 并且通过使用氧化物层作为掩模，蚀刻基板以在基板上形成凹部。

Public/Granted literature

US20070178647A1 SEMICONDUCTOR DEVICES HAVING RECESSED STRUCTURES AND METHODS OF FORMING THE SAME Public/Granted day:2007-08-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）