Invention Grant
- Patent Title: Method for fabricating capacitor of semiconductor device
- Patent Title (中): 制造半导体器件电容器的方法
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Application No.: US12345622Application Date: 2008-12-29
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Publication No.: US07659164B1Publication Date: 2010-02-09
- Inventor: Keon Yoo
- Applicant: Keon Yoo
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2008-0088962 20080909
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for fabricating a capacitor of a semiconductor device comprises forming a silicon nanowire structure having a large aspect ratio using a porous anodic alumina structure and applying the silicon nanowire structure to a bottom electrode, thereby obtaining a capacitor having secured capacitance.
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