Invention Grant
- Patent Title: Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gate
- Patent Title (中): 通过使用微晶硅膜作为浮动栅极来提高闪存性能的方法
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Application No.: US11422059Application Date: 2006-06-02
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Publication No.: US07659167B2Publication Date: 2010-02-09
- Inventor: Tzung-Ting Han , Chin-Ta Su , Yun-Chi Yang
- Applicant: Tzung-Ting Han , Chin-Ta Su , Yun-Chi Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
This invention provides a method for forming polysilicon by using silane with introducing hydrogen, such that polysilicon is microcrystalline. This microcrystal polysilicon can be applied to floating gate of flash memory to improve the character of flash memory.
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