Invention Grant
- Patent Title: eFuse and methods of manufacturing the same
- Patent Title (中): eFuse及其制造方法
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Application No.: US11266740Application Date: 2005-11-03
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Publication No.: US07659168B2Publication Date: 2010-02-09
- Inventor: Louis Lu-Chen Hsu , Jack A. Mandelman , William R. Tonti
- Applicant: Louis Lu-Chen Hsu , Jack A. Mandelman , William R. Tonti
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Dugan & Dugan, PC
- Agent Roy W. Truelson
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In a first aspect, a first apparatus is provided. The first apparatus is an eFuse including (1) a semiconducting layer above an insulating oxide layer of a substrate; (2) a diode formed in the semiconducting layer; and (3) a silicide layer formed on the diode. Numerous other aspects are provided.
Public/Granted literature
- US20070099326A1 eFuse and methods of manufacturing the same Public/Granted day:2007-05-03
Information query
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