Invention Grant
US07659170B2 Method of increasing transistor drive current by recessing an isolation trench
有权
通过凹陷隔离沟槽来增加晶体管驱动电流的方法
- Patent Title: Method of increasing transistor drive current by recessing an isolation trench
- Patent Title (中): 通过凹陷隔离沟槽来增加晶体管驱动电流的方法
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Application No.: US11620406Application Date: 2007-01-05
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Publication No.: US07659170B2Publication Date: 2010-02-09
- Inventor: Christoph Schwan , Manfred Horstmann , Martin Gerhardt , Markus Forseberg
- Applicant: Christoph Schwan , Manfred Horstmann , Martin Gerhardt , Markus Forseberg
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102006025364 20060531
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
By recessing the isolation structure of a transistor prior to silicidation, the series resistance may be reduced due to the increased amount of metal silicide formed in the vicinity of the isolation structure. By recessing the isolation structure prior to the formation of the gate electrode, an increased degree of poly wrap around may be obtained, thereby increasing the effective channel width.
Public/Granted literature
- US20070278596A1 METHOD OF INCREASING TRANSISTOR DRIVE CURRENT BY RECESSING AN ISOLATION TRENCH Public/Granted day:2007-12-06
Information query
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