Invention Grant
US07659179B2 Method of forming transistor using step STI profile in memory device
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使用存储器件中的步骤STI轮廓形成晶体管的方法
- Patent Title: Method of forming transistor using step STI profile in memory device
- Patent Title (中): 使用存储器件中的步骤STI轮廓形成晶体管的方法
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Application No.: US11322843Application Date: 2005-12-29
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Publication No.: US07659179B2Publication Date: 2010-02-09
- Inventor: Hyun Hu
- Applicant: Hyun Hu
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2005-0027298 20050331
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method of forming a memory device includes forming first and second isolation structures on a semiconductor substrate, the first and second isolation structures defining an active region therebetween; and etching a portion of the semiconductor substrate provided within the active region to define a step profile, so that the active region includes a first vertical portion and an upper primary surface, the first vertical portion extending above the upper primary surface.
Public/Granted literature
- US20060223263A1 Method of forming transistor using step STI profile in memory device Public/Granted day:2006-10-05
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