Invention Grant
- Patent Title: Method of manufacturing CMOS image sensor
- Patent Title (中): CMOS图像传感器的制造方法
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Application No.: US11948808Application Date: 2007-11-30
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Publication No.: US07659186B2Publication Date: 2010-02-09
- Inventor: Sun Kyung Bang
- Applicant: Sun Kyung Bang
- Applicant Address: KR Seoul
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Workman Nydegger
- Priority: KR10-2006-0137362 20061229
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A method for manufacturing the CMOS image sensor comprising forming an epitaxial layer provided with a plurality of photo diodes on a semiconductor substrate, coating a first photo resist on the epitaxial layer and performing a patterning process on the first photo resist using a predetermined reference value in order to form a first photo resist pattern, coating a second photo resist on the epitaxial layer and first photo resist pattern and performing a patterning process for the second photo resist in order to form the second photo resist pattern on the first photo resist pattern; and forming a well area of a pixel area by performing a dopant implantation process using a mask pattern including the first photo resist pattern and the second photo resist pattern.
Public/Granted literature
- US20080160666A1 METHOD OF MANUFACTURING CMOS IMAGE SENSOR Public/Granted day:2008-07-03
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