Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11398651Application Date: 2006-04-06
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Publication No.: US07659188B2Publication Date: 2010-02-09
- Inventor: Takuji Tanaka
- Applicant: Takuji Tanaka
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2005-257054 20050905; JP2005-339386 20051124
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention provides a method for manufacturing a semiconductor device which includes a step of forming one optional impurity region in a semiconductor substrate at a place apart from the surface thereof, and in the method described above, ion implantation is performed a plurality of times while the position of an end portion of a mask pattern used for ion implantation is changed.
Public/Granted literature
- US20070054451A1 Semiconductor device and method for manufacturing the same Public/Granted day:2007-03-08
Information query
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