Invention Grant
- Patent Title: Gold/silicon eutectic die bonding method
- Patent Title (中): 金/硅共晶晶片接合法
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Application No.: US11605831Application Date: 2006-11-27
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Publication No.: US07659191B2Publication Date: 2010-02-09
- Inventor: Kai Liu , Ming Sun
- Applicant: Kai Liu , Ming Sun
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: Schein & Cai LLP
- Agent Jingming Cai
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/76 ; H01L21/30 ; H01L21/46 ; H01L21/44
Abstract:
A direct gold/silicon eutectic die bonding method is disclosed. The method includes the steps of gold plating a die bonding pad, grinding a wafer to a desired thickness, dicing the wafer after the grinding step, picking a die, and attaching the die to the die bonding pad at a temperature above the gold/silicon eutectic temperature. For thinner wafers, a dicing before grinding process is employed.
Public/Granted literature
- US20080124838A1 Gold/silicon eutectic die bonding method Public/Granted day:2008-05-29
Information query
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