High reliability multilayer circuit substrates and methods for their formation

Invention Grant

US07659194B2 High reliability multilayer circuit substrates and methods for their formation 有权

Title translation: 高可靠性多层电路基板及其形成方法

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Patent Title: High reliability multilayer circuit substrates and methods for their formation
Patent Title (中): 高可靠性多层电路基板及其形成方法
Application No.: US11395457

Application Date: 2006-03-31
Publication No.: US07659194B2

Publication Date: 2010-02-09
Inventor: Rajiv Shah , Shaun Pendo
Applicant: Rajiv Shah , Shaun Pendo
Applicant Address: US CA Northridge
Assignee: Medtronic MiniMed, Inc.
Current Assignee: Medtronic MiniMed, Inc.
Current Assignee Address: US CA Northridge
Agency: Foley & Lardner LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

High reliability multilayer circuit substrates and methods for their formation

Abstract:

A multilayer circuit substrate for multi-chip modules or hybrid circuits includes a dielectric base substrate, conductors formed on the base substrate and a vacuum deposited dielectric thin film formed over the conductors and the base substrate. The vacuum deposited dielectric thin film is patterned using sacrificial structures formed by shadow mask techniques. Substrates formed in this manner enable significant increases in interconnect density and significant reduction of over-all substrate thickness.

Abstract(Chinese):

用于多芯片模块或混合电路的多层电路衬底包括电介质基底，形成在基底衬底上的导体和形成在导体和基底衬底上的真空沉积的电介质薄膜。使用由荫罩技术形成的牺牲结构对真空沉积的电介质薄膜进行图案化。以这种方式形成的基板能够显着增加互连密度并显着降低总体衬底厚度。

Public/Granted literature

US20060189044A1 High reliability multilayer circuit substrates and methods for their formation Public/Granted day:2006-08-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）