Invention Grant
- Patent Title: Self-constrained anisotropic germanium nanostructure from electroplating
- Patent Title (中): 电镀自限制各向异性锗纳米结构
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Application No.: US11620391Application Date: 2007-01-05
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Publication No.: US07659200B2Publication Date: 2010-02-09
- Inventor: Guy Cohen , Qiang Huang , Lubomyr T. Romankiw , Hariklia Deligianni
- Applicant: Guy Cohen , Qiang Huang , Lubomyr T. Romankiw , Hariklia Deligianni
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Connolly Bove Lodge & Hutz LLP
- Agent Louis J. Percello
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
Public/Granted literature
- US20080166858A1 SELF-CONSTRAINED ANISOTROPIC GERMANIUM NANOSTRUCTURE FROM ELECTROPLATING Public/Granted day:2008-07-10
Information query
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