Invention Grant
- Patent Title: Amorphous carbon-based non-volatile memory
- Patent Title (中): 无定形碳基非挥发性记忆
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Application No.: US11318509Application Date: 2005-12-28
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Publication No.: US07659205B2Publication Date: 2010-02-09
- Inventor: Kristy A. Campbell
- Applicant: Kristy A. Campbell
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A resistance variable memory element and a method for forming the same. The memory element has an amorphous carbon layer between first and second electrodes. A metal-containing layer is formed between the amorphous carbon layer and the second electrode.
Public/Granted literature
- US20060103026A1 Amorphous carbon-based non-volatile memory Public/Granted day:2006-05-18
Information query
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