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US07659357B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same 有权
二氧化硅膜形成材料，二氧化硅膜及其制造方法，多层布线结构及其制造方法以及半导体装置及其制造方法

  • Patent Title: Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same
  • Patent Title (中): 二氧化硅膜形成材料，二氧化硅膜及其制造方法，多层布线结构及其制造方法以及半导体装置及其制造方法
  • Application No.: US11274094
    Application Date: 2005-11-16
  • Publication No.: US07659357B2
    Publication Date: 2010-02-09
  • Inventor: Yoshihiro Nakata , Ei Yano
  • Applicant: Yoshihiro Nakata , Ei Yano
  • Applicant Address: JP Kawasaki
  • Assignee: Fujitsu Limited
  • Current Assignee: Fujitsu Limited
  • Current Assignee Address: JP Kawasaki
  • Agency: Westerman, Hattori, Daniels & Adrian, LLP
  • Priority: JP2005-200967 20050708
  • Main IPC: C08G77/00
  • IPC: C08G77/00 ;  H01L21/469
Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same
Abstract:
The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH3 bond and an Si—CHx- bond, where x represents an integer of 0 to 2.
Abstract(Chinese):

本发明的二氧化硅薄膜形成材料包括硅氧烷聚合物，其包含作为其结构的一部分的CH x，Si-O-Si键，Si-CH 3键和Si-CH x键，其中x表示整数 为0至2。

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