Invention Grant
- Patent Title: Photoelectric conversion device and solid-state imaging device
- Patent Title (中): 光电转换装置和固态成像装置
-
Application No.: US11723110Application Date: 2007-03-16
-
Publication No.: US07659499B2Publication Date: 2010-02-09
- Inventor: Yoshiki Maehara
- Applicant: Yoshiki Maehara
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-073160 20060316
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
A photoelectric conversion device including: a first electrode; a photoelectric conversion layer; and a second electrode, in this order, wherein the photoelectric conversion device further includes: a deterioration factor adsorptive and/or reactive layer which covers the first electrode, the photoelectric conversion layer and the second electrode and which has at least one of adsorptivity of adsorbing a deterioration factor and reactivity of reacting with the deterioration factor; and a passivation layer which covers the deterioration factor adsorptive and/or reactive layer to protect the first electrode, the photoelectric conversion layer and the second electrode.
Public/Granted literature
- US20070215204A1 Photoelectric conversion device and solid-state imaging device Public/Granted day:2007-09-20
Information query
IPC分类: