Invention Grant
- Patent Title: Field effect transistor
- Patent Title (中): 场效应晶体管
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Application No.: US11336817Application Date: 2006-01-23
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Publication No.: US07659537B2Publication Date: 2010-02-09
- Inventor: Tsutomu Tezuka , Shinichi Takagi , Tomohisa Mizuno
- Applicant: Tsutomu Tezuka , Shinichi Takagi , Tomohisa Mizuno
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2002-192681 20020701
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A field effect transistor comprises a source and a drain, and a channel layer of Si1-x-yGexCy crystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer.
Public/Granted literature
- US20060118776A1 Field effect transistor Public/Granted day:2006-06-08
Information query
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