Invention Grant
- Patent Title: Silicon plate, producing method thereof, and solar cell
- Patent Title (中): 硅板及其制造方法以及太阳能电池
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Application No.: US11413030Application Date: 2006-04-28
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Publication No.: US07659542B2Publication Date: 2010-02-09
- Inventor: Yoshihiro Tsukuda
- Applicant: Yoshihiro Tsukuda
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye, P.C.
- Priority: JP2001-320602 20011018
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A polycrystalline silicon plate has grain boundary lines on a surface thereof, and at least one of the grain boundary lines is a quasi-linear grain boundary line (1). The silicon plate is used to produce a solar cell. The silicon plate is formed using a base substrate having an irregular surface provided with dotted or linear protrusions, which makes it possible to control the grain boundary lines. As such, an inexpensive and high-quality silicon plate can be provided. Further, by employing this silicon plate to produce a solar cell, an inexpensive and high-quality solar cell can be provided as well.
Public/Granted literature
- US20060202208A1 Silicon plate, producing method thereof, and solar cell Public/Granted day:2006-09-14
Information query
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