Invention Grant
- Patent Title: Electric field read/write head and method of manufacturing same and data read/write device
- Patent Title (中): 电场读/写头及其制造方法及数据读写装置
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Application No.: US11723567Application Date: 2007-03-21
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Publication No.: US07659562B2Publication Date: 2010-02-09
- Inventor: Hyoung-soo Ko , Ju-hwan Jung , Yong-su Kim , Seung-bum Hong , Hong-sik Park
- Applicant: Hyoung-soo Ko , Ju-hwan Jung , Yong-su Kim , Seung-bum Hong , Hong-sik Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2006-0072925 20060802
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/34 ; H01L29/74 ; H01L31/111 ; H01L27/14 ; H01L29/82 ; H01L29/84 ; H01L43/00 ; G11B5/187 ; G11B9/00

Abstract:
An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.
Public/Granted literature
- US20080030909A1 Electric field read/write head and method of manufacturing same and data read/write device Public/Granted day:2008-02-07
Information query
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