Invention Grant
US07659565B2 CMOS image sensor with a microlens and method for fabricating the same
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具有微透镜的CMOS图像传感器及其制造方法
- Patent Title: CMOS image sensor with a microlens and method for fabricating the same
- Patent Title (中): 具有微透镜的CMOS图像传感器及其制造方法
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Application No.: US11504559Application Date: 2006-08-14
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Publication No.: US07659565B2Publication Date: 2010-02-09
- Inventor: Cho Eun Sang
- Applicant: Cho Eun Sang
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Forntey
- Priority: KR10-2005-0074028 20050812
- Main IPC: H01L31/14
- IPC: H01L31/14
Abstract:
A CMOS image sensor and a method for fabricating the same are provided. A CMOS image sensor includes: a plurality of photodiodes a predetermined distance apart on a semiconductor substrate; an insulation layer on an entire surface of the semiconductor substrate; a passivation layer on the insulation layer; a plurality of color filters on the passivation layer corresponding to the photodiodes; a planarization layer on an entire surface of the semiconductor substrate including the color filters; and a microlens on the planarization layer corresponding to each of the color filters and having a bottom diameter of 2.5 to 3.0 μm.
Public/Granted literature
- US20070034916A1 CMOS image sensor and method for fabricating the same Public/Granted day:2007-02-15
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