Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11445236Application Date: 2006-06-02
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Publication No.: US07659571B2Publication Date: 2010-02-09
- Inventor: Yasushi Yamazaki
- Applicant: Yasushi Yamazaki
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-163575 20050603
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.
Public/Granted literature
- US20060273388A1 Semiconductor device and method for manufacturing the same Public/Granted day:2006-12-07
Information query
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