Invention Grant
- Patent Title: Power semiconductor device with current sense capability
- Patent Title (中): 具有电流检测能力的功率半导体器件
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Application No.: US11477691Application Date: 2006-06-29
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Publication No.: US07659577B2Publication Date: 2010-02-09
- Inventor: Vincent Thiery
- Applicant: Vincent Thiery
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
A power semiconductor device includes a power device and a current sense device formed in a common semiconductor region.
Public/Granted literature
- US20070018196A1 Power semiconductor device with current sense capability Public/Granted day:2007-01-25
Information query
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