Invention Grant
US07659582B2 Active silicon device on a cleaved silicon-on-insulator substrate
有权
在绝缘体上的绝缘体基板上的有源硅器件
- Patent Title: Active silicon device on a cleaved silicon-on-insulator substrate
- Patent Title (中): 在绝缘体上的绝缘体基板上的有源硅器件
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Application No.: US11698558Application Date: 2007-01-26
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Publication No.: US07659582B2Publication Date: 2010-02-09
- Inventor: Steve Droes , Masao Moriguchi , Yutaka Takafuji
- Applicant: Steve Droes , Masao Moriguchi , Yutaka Takafuji
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392
Abstract:
A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.
Public/Granted literature
- US20070122998A1 Active silicon device on a cleaved silicon-on-insulator substrate Public/Granted day:2007-05-31
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