Invention Grant
- Patent Title: Inverter with four-transistor Schmitt trigger
- Patent Title (中): 具有四晶体管施密特触发器的逆变器
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Application No.: US12142602Application Date: 2008-06-19
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Publication No.: US07659586B2Publication Date: 2010-02-09
- Inventor: Themistokles Afentakis , Apostolos T. Voutsas , Paul J. Schuele
- Applicant: Themistokles Afentakis , Apostolos T. Voutsas , Paul J. Schuele
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/00
Abstract:
A four-transistor Schmitt trigger inverter is provided. The Schmitt trigger inverter is made from an n-channel MOS (NMOS) dual-gate thin-film transistor (DG-TFT) and a p-channel MOS (PMOS) DG-TFT, both DG-TFTs having a top gate, a back gate, and source/drain regions. A (conventional) NMOS TFT has a gate connected to an NMOS DG-TFT first S/D region and a PMOS DG-TFT first S/D region. The NMOS TFT also has a first S/D region connected to the NMOS DG-TFT back gate and the PMOS DG-TFT back gate. A (conventional) PMOS TFT has a gate connected to the NMOS TFT gate, and a first S/D region connected to the NMOS TFT first S/D region.
Public/Granted literature
- US20080272816A1 Inverter with Four-Transistor Schmitt Trigger Public/Granted day:2008-11-06
Information query
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