Invention Grant
- Patent Title: Semiconductor ground shield
- Patent Title (中): 半导体接地屏蔽
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Application No.: US12371662Application Date: 2009-02-16
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Publication No.: US07659598B2Publication Date: 2010-02-09
- Inventor: Mete Erturk , Alvin J. Joseph , Anthony K. Stamper
- Applicant: Mete Erturk , Alvin J. Joseph , Anthony K. Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Richard Kotulak
- Main IPC: H01L29/70
- IPC: H01L29/70

Abstract:
A ground shield is disclosed that includes a ‘cheesed’ metal positioned within a dielectric layer and a metal region positioned within a first metal level over the cheesed metal. The ground shield can have different forms depending on the metal used, and provisions are made to prevent diffusion of copper (Cu) when that is used as the metal in the cheese metal of the ground shield. The ground shield provides a low resistance, very thick metal at a first metal (M1) level for passive RF elements in conjunction with the standard back-end-of-line (BEOL) integration. The invention also includes a method of forming the ground shield.
Public/Granted literature
- US20090146247A1 SEMICONDUCTOR GROUND SHIELD Public/Granted day:2009-06-11
Information query
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