Invention Grant
- Patent Title: Semiconductor device having moisture-proof dam and method of fabricating the same
- Patent Title (中): 具有防潮堤的半导体装置及其制造方法
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Application No.: US11823558Application Date: 2007-06-28
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Publication No.: US07659601B2Publication Date: 2010-02-09
- Inventor: Ji-Suk Park , Won-Chul Lee
- Applicant: Ji-Suk Park , Won-Chul Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2006-0102536 20061020
- Main IPC: H01L29/93
- IPC: H01L29/93
Abstract:
A semiconductor device having a moisture-proof dam and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating layer provided on a substrate having a fuse region. A fuse guard dam is provided on the interlayer insulating layer to surround the fuse region. A cover insulating layer is provided on the interlayer insulating layer to cover the fuse guard dam and have a fuse window exposing a middle part of the fuse region, and at least two upper extension dams are provided in the cover insulating layer to sequentially surround the fuse region and be connected to the fuse guard dam.
Public/Granted literature
- US20080093704A1 Semiconductor device having moisture-proof dam and method of fabricating the same Public/Granted day:2008-04-24
Information query
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