Invention Grant
US07659602B2 Semiconductor component with MIM capacitor 失效
具有MIM电容器的半导体元件

Semiconductor component with MIM capacitor
Abstract:
A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewall, the first electrode being formed from a conductive material. An insulating fill material is disposed within the inner portion of the first electrode. A capacitor dielectric is disposed adjacent at least a portion of the outer sidewall of the first electrode. A second electrode is disposed adjacent the outer sidewall of the first electrode and separated therefrom by the capacitor dielectric. The second electrode is not formed within the inner portion of the first electrode.
Public/Granted literature
Information query
Patent Agency Ranking
0/0