Invention Grant
- Patent Title: Semiconductor component with MIM capacitor
- Patent Title (中): 具有MIM电容器的半导体元件
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Application No.: US12131728Application Date: 2008-06-02
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Publication No.: US07659602B2Publication Date: 2010-02-09
- Inventor: Stefan Tegen , Klaus Muemmler , Peter Baars , Odo Wunnicke
- Applicant: Stefan Tegen , Klaus Muemmler , Peter Baars , Odo Wunnicke
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L49/00
- IPC: H01L49/00

Abstract:
A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewall, the first electrode being formed from a conductive material. An insulating fill material is disposed within the inner portion of the first electrode. A capacitor dielectric is disposed adjacent at least a portion of the outer sidewall of the first electrode. A second electrode is disposed adjacent the outer sidewall of the first electrode and separated therefrom by the capacitor dielectric. The second electrode is not formed within the inner portion of the first electrode.
Public/Granted literature
- US20090294907A1 SEMICONDUCTOR COMPONENT WITH MIM CAPACITOR Public/Granted day:2009-12-03
Information query
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