Invention Grant
- Patent Title: Vertical power semiconductor component, semiconductor device and methods for the production thereof
- Patent Title (中): 垂直功率半导体元件，半导体器件及其制造方法
-
Application No.: US11560158Application Date: 2006-11-15
-
Publication No.: US07659611B2Publication Date: 2010-02-09
- Inventor: Ralf Otremba
- Applicant: Ralf Otremba
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Banner & Witcoff, Ltd.
- Priority: DE102005054872 20051115
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A vertical power semiconductor component (1) having a top side (3) and a rear side (4) is provided. The top side (3) has at least one first electrode contact area (8) and at least one control electrode area (9) and the rear side (4) has a second electrode contact area (7). A first metallization (10) having a thickness a is arranged on the first electrode contact area (8). A second metallization (11) having a thickness b is arranged on the control electrode area (9). A third metallization (6) having a thickness c is arranged on the second electrode contact area (7). The thickness a of the first metallization (10) is at least 10 times thicker than the thickness b of the second metallization (11).
Public/Granted literature
- US20070145582A1 Vertical Power Semiconductor Component, Semiconductor Device And Methods For The Production Thereof Public/Granted day:2007-06-28
Information query
IPC分类:
