Invention Grant
US07659615B2 High power package with dual-sided heat sinking 有权
大功率封装,双面散热

High power package with dual-sided heat sinking
Abstract:
An assembly includes a semiconductor die disposed between an upper substrate and a lower substrate. A circuit board that defines a through hole is spaced axially below the upper substrate to define a gap between the upper substrate and the circuit board. An upper heat sink is thermally connected to the upper substrate by an upper thermal interface material to transfer heat in a first dissipation path to the upper heat sink. A lower heat sink is thermally connected to the lower substrate by a lower thermal interface material to transfer heat in a second dissipation path to the lower heat sink. A plurality of first interconnectors are disposed in the gap to solder the upper substrate to the circuit board. The assembly is distinguished by a plurality of second interconnectors that are disposed between the upper substrate and the lower substrate to position the lower substrate in the through hole of the circuit board.
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