Invention Grant
- Patent Title: High power package with dual-sided heat sinking
- Patent Title (中): 大功率封装,双面散热
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Application No.: US11799916Application Date: 2007-05-03
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Publication No.: US07659615B2Publication Date: 2010-02-09
- Inventor: Todd P. Oman
- Applicant: Todd P. Oman
- Applicant Address: US MI Troy
- Assignee: Delphi Technologies, Inc.
- Current Assignee: Delphi Technologies, Inc.
- Current Assignee Address: US MI Troy
- Agent Jimmy L. Funke
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/15

Abstract:
An assembly includes a semiconductor die disposed between an upper substrate and a lower substrate. A circuit board that defines a through hole is spaced axially below the upper substrate to define a gap between the upper substrate and the circuit board. An upper heat sink is thermally connected to the upper substrate by an upper thermal interface material to transfer heat in a first dissipation path to the upper heat sink. A lower heat sink is thermally connected to the lower substrate by a lower thermal interface material to transfer heat in a second dissipation path to the lower heat sink. A plurality of first interconnectors are disposed in the gap to solder the upper substrate to the circuit board. The assembly is distinguished by a plurality of second interconnectors that are disposed between the upper substrate and the lower substrate to position the lower substrate in the through hole of the circuit board.
Public/Granted literature
- US20080272483A1 High power package with dual-sided heat sinking Public/Granted day:2008-11-06
Information query
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