Invention Grant
US07659618B2 Semiconductor device for radio frequencies of more than 10 GHz and method for producing the device
有权
用于10GHz以上的射频的半导体装置及其制造方法
- Patent Title: Semiconductor device for radio frequencies of more than 10 GHz and method for producing the device
- Patent Title (中): 用于10GHz以上的射频的半导体装置及其制造方法
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Application No.: US11488872Application Date: 2006-07-18
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Publication No.: US07659618B2Publication Date: 2010-02-09
- Inventor: Jochen Dangelmaier , Klaus Pressel , Horst Theuss
- Applicant: Jochen Dangelmaier , Klaus Pressel , Horst Theuss
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig, & Czaja, P.L.L.C.
- Priority: DE102005034011 20050718
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A semiconductor device for radio frequencies of more than 10 GHz having a semiconductor chip is disclosed. In one embodiment, the semiconductor chip, on its active top side, having a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage. In one embodiment, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip is directly embedded in a plastic housing composition, the plastic housing composition is arranged such that it is spaced apart from the radio-frequency region on the active top side of the semiconductor chip.
Public/Granted literature
- US20070023896A1 Semiconductor device for radio frequencies of more than 10 GHz and method for producing the device Public/Granted day:2007-02-01
Information query
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