Invention Grant
- Patent Title: Semiconductor device having a nanoscale conductive structure
- Patent Title (中): 具有纳米级导电结构的半导体器件
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Application No.: US11785164Application Date: 2007-04-16
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Publication No.: US07659624B2Publication Date: 2010-02-09
- Inventor: Subramanya Mayya Kolake , Sun-Woo Lee , In-Seok Yeo
- Applicant: Subramanya Mayya Kolake , Sun-Woo Lee , In-Seok Yeo
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co,., Ltd.
- Current Assignee: Samsung Electronics Co,., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0037315 20060425
- Main IPC: H01L23/48
- IPC: H01L23/48 ; B05D5/12 ; H01L29/76 ; H01L29/94 ; H01L31/00
Abstract:
A semiconductor device includes a substrate, an insulating layer having an opening, the opening exposing a portion of the substrate, a hydrophobic layer covering substantially only a sidewall and a top surface of the insulating layer, and a nanoscale conductive structure on the exposed portion of the substrate.
Public/Granted literature
- US20080157363A1 Method of forming the nanoscale conductive structure and a semiconductor device formed thereby Public/Granted day:2008-07-03
Information query
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