Invention Grant
- Patent Title: Semiconductor device including a barrier metal film
- Patent Title (中): 包括阻挡金属膜的半导体装置
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Application No.: US10578003Application Date: 2005-05-20
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Publication No.: US07659626B2Publication Date: 2010-02-09
- Inventor: Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
- Applicant: Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-165361 20040603
- International Application: PCT/JP2005/009268 WO 20050520
- International Announcement: WO2005/119751 WO 20051215
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/4763 ; H01L23/48
Abstract:
A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
Public/Granted literature
- US20070108616A1 Semiconductor device and method for fabricating the same Public/Granted day:2007-05-17
Information query
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