Invention Grant
- Patent Title: Photodiode
- Patent Title (中): 光电二极管
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Application No.: US11950795Application Date: 2007-12-05
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Publication No.: US07659627B2Publication Date: 2010-02-09
- Inventor: Yukiya Miyachi , Wojciech P. Giziewicz , Jurgen Michel , Lionel C. Kimerling
- Applicant: Yukiya Miyachi , Wojciech P. Giziewicz , Jurgen Michel , Lionel C. Kimerling
- Applicant Address: JP Tokyo US MA Cambridge
- Assignee: FUJIFILM Corporation,Massachusetts Instutite of Technology
- Current Assignee: FUJIFILM Corporation,Massachusetts Instutite of Technology
- Current Assignee Address: JP Tokyo US MA Cambridge
- Agency: Sughrue Mion, PLLC
- Main IPC: H01L29/41
- IPC: H01L29/41

Abstract:
A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.
Public/Granted literature
- US20090146239A1 PHOTODIODE Public/Granted day:2009-06-11
Information query
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