Invention Grant
- Patent Title: Interconnect structures with interlayer dielectric
- Patent Title (中): 互连结构与层间电介质
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Application No.: US11841180Application Date: 2007-08-20
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Publication No.: US07659630B2Publication Date: 2010-02-09
- Inventor: Zhiping Yin , Mark E. Jost
- Applicant: Zhiping Yin , Mark E. Jost
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The present invention relates to metallic interconnect having an interlayer dielectric thereover, the metallic interconnect having an upper surface substantially free from oxidation. The metallic interconnect may have an exposed upper surface thereon that is passivated by a nitrogen containing compound.
Public/Granted literature
- US20070278695A1 INTERCONNECT STRUCTURES Public/Granted day:2007-12-06
Information query
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