Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12204394Application Date: 2008-09-04
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Publication No.: US07659635B2Publication Date: 2010-02-09
- Inventor: Hidetoshi Kuraya , Hideyuki Arakawa , Fumiaki Aga
- Applicant: Hidetoshi Kuraya , Hideyuki Arakawa , Fumiaki Aga
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-147674 20050520
- Main IPC: H01L29/40
- IPC: H01L29/40 ; B23K31/00 ; C22C5/02
Abstract:
A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)≧400.
Public/Granted literature
- US20090001572A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-01-01
Information query
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