Invention Grant
- Patent Title: CMOS power switching circuit usable in DC-DC converter
- Patent Title (中): CMOS功率开关电路可用于DC-DC转换器
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Application No.: US11939439Application Date: 2007-11-13
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Publication No.: US07659754B2Publication Date: 2010-02-09
- Inventor: Gerhard Thiele , Erich Bayer
- Applicant: Gerhard Thiele , Erich Bayer
- Applicant Address: DE Freising
- Assignee: Texas Instruments Deutschland GmbH
- Current Assignee: Texas Instruments Deutschland GmbH
- Current Assignee Address: DE Freising
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Priority: DE102006053321 20061113
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00

Abstract:
A power switching circuit in CMOS technology has a power MOS transistor and a driver stage. The power MOS transistor is operated at a higher supply voltage in excess of its maximum allowable gate-source voltage; and the driver stage of the level shifter is operated at a lower supply voltage substantially lower than the supply voltage for the power MOS transistor. The driver stage includes a pair of driver MOS transistors coupled in series between a higher supply voltage rail and a reference potential rail, and at an interconnection node coupled to the gate of the power MOS transistor. The gates of the driver MOS transistors are AC-coupled to drive signals of mutually opposite phase; and the gates of the driver MOS transistors are each connected to the higher voltage supply rail through a respective parallel connection of a first resistor and a second resistor connected in series with a non-linear component. The resistance value of the second resistor is substantially smaller than the resistance value of the first resistor.
Public/Granted literature
- US20080111611A1 CMOS POWER SWITCHING CIRCUIT USABLE IN DC-DC CONVERTER Public/Granted day:2008-05-15
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